| PART |
Description |
Maker |
| MJW16212-D |
SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors POWER TRANSISTOR
|
ON Semiconductor
|
| NJT4031N NJT4031NT1G NJT4031NT3G |
NPN SOT223 40V/3A Low VCE(sat) Power Transistor
Bipolar Power Transistors NPN Silicon
|
ON Semiconductor
|
| MUR10120E/D MUR10120E-D |
SCANSWITCH Power Rectifier For High and Very High Resolution Monitors
|
ON Semiconductor
|
| BUX50SMD |
3.5 A, 125 V, NPN, Si, POWER TRANSISTOR, TO-276AB
Bipolar NPN Device in a Hermetically sealed
|
SEMELAB LTD
Seme LAB
|
| BUX98AF BUX98AFR1 |
30 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-204AE
Bipolar NPN Device in a Hermetically sealed TO3
|
SEMELAB LTD
Seme LAB
|
| BSW66 BSW66-JQR-AR1 |
2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-205AD
Bipolar NPN Device in a Hermetically sealed TO39
|
SEMELAB LTD
Seme LAB
|
| SF_MJ14000 BUW38 MJ14000 SF_BUW38 MJ14000R1 |
70 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AE
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
|
SEMELAB LTD
SEME-LAB[Seme LAB]
|
| SF_BUY81 2N5253 BUY81 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package 7.5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-205AD
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| BFS17W BFS17W. |
RF-Bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
RF-Bipolar NPN Type Transistors with transition frequency from 1 to 6 GHz
NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| 2N3440S |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
|
SEME-LAB[Seme LAB]
|
